ReP USP - Resultado da busca

Filtros : "Araujo, C Moyses" Limpar

Filtros

Artigo de periodico
On the Mechanism of Carbon Dioxide Reduction on Sn-Based Electrodes: Insights into the Role of Oxide Surfaces: Insights into the Role of Oxide Surfaces (2019)
Damas, Giane B; Miranda, Caetano Rodrigues; Sgarbi,Ricardo; Portela, James M; Camilo, Mariana R; Lima, Fabio Henrique Barros de ; Araujo, C Moyses
Source: Catalysts. Unidades: IF, IQSC
Assunto: ELETROCATÁLISE
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
DAMAS, Giane B et al. On the Mechanism of Carbon Dioxide Reduction on Sn-Based Electrodes: Insights into the Role of Oxide Surfaces: Insights into the Role of Oxide Surfaces. Catalysts, v. 9, n. 9, p. 636-653, 2019Tradução . . Disponível em: https://doi.org/10.3390/catal9080636. Acesso em: 27 abr. 2024.
APA
Damas, G. B., Miranda, C. R., Sgarbi, R., Portela, J. M., Camilo, M. R., Lima, F. H. B. de, & Araujo, C. M. (2019). On the Mechanism of Carbon Dioxide Reduction on Sn-Based Electrodes: Insights into the Role of Oxide Surfaces: Insights into the Role of Oxide Surfaces. Catalysts, 9( 9), 636-653. doi:10.3390/catal9080636
NLM
Damas GB, Miranda CR, Sgarbi R, Portela JM, Camilo MR, Lima FHB de, Araujo CM. On the Mechanism of Carbon Dioxide Reduction on Sn-Based Electrodes: Insights into the Role of Oxide Surfaces: Insights into the Role of Oxide Surfaces [Internet]. Catalysts. 2019 ;9( 9): 636-653.[citado 2024 abr. 27 ] Available from: https://doi.org/10.3390/catal9080636
Vancouver
Damas GB, Miranda CR, Sgarbi R, Portela JM, Camilo MR, Lima FHB de, Araujo CM. On the Mechanism of Carbon Dioxide Reduction on Sn-Based Electrodes: Insights into the Role of Oxide Surfaces: Insights into the Role of Oxide Surfaces [Internet]. Catalysts. 2019 ;9( 9): 636-653.[citado 2024 abr. 27 ] Available from: https://doi.org/10.3390/catal9080636
Artigo de periodico
Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems (2001)
Fernandez, J R L; Araujo, C Moyses; Silva, A Ferreira da; Leite, J. R.; Sernelius, Bo E; Tabata, A; Abramog, E; Chitta, V A; Persson, C; Ahuja, R; Pepe, I; As, D J; Frey, T; Schikora, D; Lischka, K
Source: Journal of Crystal Growth. Unidade: IF
Subjects: DIELÉTRICOS, RESISTÊNCIA ELÉTRICA, MATERIAIS (ANÁLISE;TESTES), RESISTÊNCIA DOS MATERIAIS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FERNANDEZ, J R L et al. Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems. Journal of Crystal Growth, v. 231, n. 3, p. 420-427, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(01)01473-7. Acesso em: 27 abr. 2024.
APA
Fernandez, J. R. L., Araujo, C. M., Silva, A. F. da, Leite, J. R., Sernelius, B. E., Tabata, A., et al. (2001). Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems. Journal of Crystal Growth, 231( 3), 420-427. doi:10.1016/s0022-0248(01)01473-7
NLM
Fernandez JRL, Araujo CM, Silva AF da, Leite JR, Sernelius BE, Tabata A, Abramog E, Chitta VA, Persson C, Ahuja R, Pepe I, As DJ, Frey T, Schikora D, Lischka K. Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems [Internet]. Journal of Crystal Growth. 2001 ; 231( 3): 420-427.[citado 2024 abr. 27 ] Available from: https://doi.org/10.1016/s0022-0248(01)01473-7
Vancouver
Fernandez JRL, Araujo CM, Silva AF da, Leite JR, Sernelius BE, Tabata A, Abramog E, Chitta VA, Persson C, Ahuja R, Pepe I, As DJ, Frey T, Schikora D, Lischka K. Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems [Internet]. Journal of Crystal Growth. 2001 ; 231( 3): 420-427.[citado 2024 abr. 27 ] Available from: https://doi.org/10.1016/s0022-0248(01)01473-7

Digital Library of Intellectual Production of Universidade de São Paulo 2012 - 2024